Properties of carbon-infused silicon LGAD devices after non-uniform irradiation with 24 GeV/c protons - INSPIRE

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Properties of carbon-infused silicon LGAD devices after non-uniform irradiation with 24 GeV/c protons

C. Beirão da Cruz e Silva
(
- LIP, Lisbon
)
,
G. Marozzo
(
- LIP, Lisbon
)
,
G. Da Molin
(
- LIP, Lisbon
)
,
J. Hollar
(
- LIP, Lisbon
)
,
M. Gallinaro
(
- LIP, Lisbon
)

Dec 18, 2024

16 pages

Published in:

Nucl.Instrum.Meth.A 1076 (2025) 170417

Published: Mar 17, 2025

e-Print:

2412.13780 [physics.ins-det]

DOI:

10.1016/j.nima.2025.170417 (publication)

View in:

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Abstract: (Elsevier B.V.)

Forward proton spectrometers at high-energy proton colliders rely on precision timing to discriminate signal from background. Silicon low gain avalanche diodes (LGADs) are a candidate for future timing detectors in these systems. A major challenge for the use of LGADs is that these detectors must be placed within a few mm of the beams, resulting in a very large and highly non-uniform radiation environment. We present a first measurement of the current and capacitance vs. voltage behavior of LGAD sensors, after a highly non-uniform irradiation with beams of 24 GeV/c protons at fluences up to

1 \times 1 0^{16}

p/cm

^{2}

.

Low Gain Avalanche Diode
LGAD
Non-Uniform Irradiation

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