Development and Performance of Kyoto's X-ray Astronomical SOI pixel (SOIPIX) sensor

Aug 20, 2014
7 pages
Published in:
  • Proc.SPIE Int.Soc.Opt.Eng. 9144 (2014) 914412
  • Published: Aug 21, 2014
e-Print:

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Abstract: (International Society for Optics and Photonics)
We have been developing monolithic active pixel sensors, known as Kyoto’s X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5–10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3–40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300 eV (FWHM) at 6 keV and a read-out noise of 33 e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-Kα and Kβ. Moreover, we produced a fully depleted layer with a thickness of 500 μm. The event-driven readout mode has already been successfully demonstrated.© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Note:
  • 7pages, 12figures, SPIE Astronomical Telescopes and Instrumentation 2014, Montreal, Quebec, Canada. appears as Proc. SPIE 9147, Space Telescopes and Instrumentation 2014: Ultraviolet to Gamma Ray
  • Sensors
  • X-rays
  • Satellites
  • Silicon
  • X-ray astronomy
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