Amorphous VOx films with a high temperature coefficient of resistance for bolometric applications grown by reactive e-beam evaporation of V metal

Tarkaeva, E.V.; Ievleva, V.A.; Duleba, A.I.; Muratov, A.V.; Ionov, A.M.; Protasova, S.G.; Kuntsevich, A.Yu.

doi:10.1016/j.optmat.2024.115378

Amorphous VOx films with a high temperature coefficient of resistance for bolometric applications grown by reactive e-beam evaporation of V metal

Sep 13, 2023

Published in:

Opt.Mater. 151 (2024) 115378

Published: Apr 15, 2024

e-Print:

2309.07036 [cond-mat.mtrl-sci]

DOI:

10.1016/j.optmat.2024.115378 (publication)

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Abstract: (Elsevier B.V.)

Amorphous VOx films without a hysteretic phase transition are stable with respect to thermal cycling and are highly demanded as sensitive elements for resistive infrared microbolometers and thermometers. In this paper, we present the simple and low-temperature growth of amorphous vanadium oxide films by reactive electron beam evaporation of vanadium metal in a ∼ 10⁻⁴ mBar oxygen atmosphere. The major characteristic of sensitivity, i.e., the temperature coefficient of the resistivity (TCR) of the films, is weakly sensitive to both substrate material and temperature and could be tuned by varying the oxygen pressure and evaporation rate in the growth chamber up to −2.6 %/K. The resistivity value depends on the substrate material and growth parameters and remains unchanged for at least several months. Raman spectroscopy, ellipsometry, and X-ray diffraction confirm that the films are amorphous. XPS studies indicate that the film surface consists mostly of V2O5 and VO2. The higher values of the TCR are observed in the films with a higher V⁵⁺/V⁴⁺ ratio. The bulk of the film is a mixture of oxides with a stiocheometry slightly dependent on the growth conditions. The simplicity and controllability of the method, low fabrication temperature, and, hence, compatibility with the lift-off process should lead to various laboratory and industrial applications.

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