A Brief Review of Single Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide MOSFETs

Radiation hardening of the MOSFET is of the highest priority for sustaining high-power systems in the space radiation environment. SiC-based power electronics are being looked at as a strong alternative for high power spaceborne power electronic systems. The SiC MOSFET has been shown to be most prone to SEB of the radiation effects. The knowledge of SiC MOSFET device degradation and failure mechanisms are reviewed. Additionally, the viability of rad-tolerant SiC MOSFET designs and the methods of SEB simulation are evaluated. A merit system is proposed to consider the performance of radiation tolerance and nominal electrical performance. Criteria needed for high-fidelity SEB simulation are also reviewed. This paper stands as a necessary analytical review to intercede the development of rad-hard power devices for space and extreme environment applications.

References(97)

Figures(0)

[1]

Wide-bandgap-power-SiC and GaN-radiation reliability

J.-M. Lauenstein

[2]

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

J.Y. Tsao

[3]

Technology Roadmaps—TA 3: Space Power and Energy Storage

[4]

Modeling and Improving Single-Event Burnout Performance from Heavy Ion Bombardment in High-Voltage 4h-SiC Power Devices

J.A. McPherson

[5]

Cosmic Ray Failure Mechanism and Critical Factors for 3.3kV Hybrid SiC Modules

T. Nitta

[6]

Single-Event Burnout Mechanisms in SiC Power MOSFETs

A.F. Witulski

[7]

Radiation hardness study on SiC power MOSFETs

X. Zhu

[8]

Experimental and simulation studies of neutron-induced single-event burnout in SiC power diodes

T. Shoji

[9]

Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout

D.J. Lichtenwater

[10]

Taking SiC power devices to the final frontier: Addressing challenges of the space radiation environment

J.-M. Lauenstein

[11]

Single-event burnout of power bipolar junction transistors

J.L. Titus

- IEEE Trans.Nucl.Sci. 38 (1991) 1315-1322

[12]

Features of a heavy-ion-generated-current filament used in modeling single-event burnout of power MOSFETs

G.H. Johnson

[13]

Features of the triggering mechanism for single event burnout of power MOSFETs

J.H. Hohl

- IEEE Trans.Nucl.Sci. 36 (1989) 2260-2266

[14]

Burnout of Power MOS Transistors with Heavy Ions of 252-Cf

J.W. Waskiewicz

- IEEE Trans.Nucl.Sci. 33 (1986) 1710-1713

[15]

Mechanism for single-event burnout of power MOSFETs and its characterization technique

S. Kuboyama

- IEEE Trans.Nucl.Sci. 39 (1993) 1698-1703

[16]

Numerical analysis of single event burnout of power MOSFETs

S. Kuboyama

- IEEE Trans.Nucl.Sci. 40 (1993) 1872-1879

[17]

Schottky Diode Derating for Survivability in a Heavy-Ion Environment

M.C. Casey

- IEEE Trans.Nucl.Sci. 62 (2015) 2482-2489

[18]

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in HighVoltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

D.R. Ball

- IEEE Trans.Nucl.Sci. 67 (2020) 22-28

[19]

Single-Event Effects in Silicon and Silicon Carbide Power Devices

J.-M. Lauenstein

[20]

Analysis of neutron induced single-event burnout in SiC power MOSFETs

T. Shoji

[21]

Failure mechanism investigation for silicon carbide power devices

X. Zhang

[22]

Neutron-induced failure in super-junction, IGBT, and SiC power devices

A. Griffoni

[23]

Enhanced charge collection in SiC power MOSFETs demonstrated by pulse-laser two-photon absorption SEE experiments

R.A. Johnson

- IEEE Trans.Nucl.Sci. 66 (2019) 1694-1701

[24]

A simulation-based comparison between Si and SiC MOSFETs on singleevent burnout susceptibility

X. Zhou

- IEEE Trans.Electron.Dev. 66 (2019) 2551-2556

[25]

Mechanisms of Heavy Ion-Induced Single Event Burnout in 4HSiC Power MOSFETs

J.A. McPherson

1-25 of 97
1
2
3
4
25 / page