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Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature

Nov 15, 2024

19 pages

e-Print:

2411.10208 [quant-ph]

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Abstract: (arXiv)

The silicon vacancy center in Silicon Carbide (SiC) provides an optically addressable qubit at room temperature in its spin-

\frac{3}{2}

electronic state. However, optical spin initialization and readout are less efficient compared to those of spin-1 systems, such as nitrogen-vacancy centers in diamond, under non-resonant optical excitation. Spin-dependent fluorescence exhibits contrast only between

|m=\pm 3/2\rangle

and

|m=\pm 1/2\rangle

states, and optical pumping does not create a population difference between

|+1/2\rangle

and

|-1/2\rangle

states. Thus, operating one qubit (e.g.,

\left\{|+3/2\rangle, |+1/2\rangle \right\}

states) leaves the population in the remaining state (

|-1/2\rangle

) unaffected, contributing to background in optical readout. To mitigate this problem, we propose a sensing scheme based on duplex qubit operation in the quartet, using microwave pulses with two resonant frequencies to simultaneously operate

\left\{ |+3/2\rangle, |+1/2\rangle \right\}

and

\left\{ |-1/2\rangle, |-3/2\rangle \right\}

. Experimental results demonstrate that this approach doubles signal contrast in optical readout and improves sensitivity in AC magnetometry compared to simplex operation.

Note:

19 pages, 5 figures, 1 table

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