Photovoltage effects in photoemission from thin GaAs layers
Mar, 2001
26 pages
Published in:
- Phys.Lett.A 282 (2001) 309-318
e-Print:
- cond-mat/0103500 [cond-mat]
Report number:
- SLAC-PUB-8753
Experiments:
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Abstract: (arXiv)
A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from 5\times10^{18} cm^{-3} to 5\times10^{19} cm^{-3} for a set of four samples. The results show that the surface escape probability is a linear function of the NEA energy. The surface photovoltage effect on photoemission is found to diminish to zero at a doping level of 5\times10^{19} cm^{-3}. The experimental results are shown to be in good agreement with calculations using a charge limit model based on surface photovoltage kinetics that assume a constant electron energy relaxation rate in the band bending region.Note:
- LaTeX RevTeX 11 pages, 6 figures Report-no: SLAC-PUB-8753 Subj-class: Materials Science; Accelerator Physics
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