Evaluation of slim-edge, multi-guard, and punch-through-protection structures before and after proton irradiation

Mitsui, S.; Unno, Y.; Ikegami, Y.; Takubo, Y.; Terada, S.; Hara, K.; Takahashi, Y.; Jinnouchi, O.; Nagai, R.; Kishida, T.

doi:10.1016/j.nima.2012.05.071

Evaluation of slim-edge, multi-guard, and punch-through-protection structures before and after proton irradiation

2013

5 pages

Part of Proceedings, 8th International 'Hiroshima' Symposium on Development and application of semiconductor tracking detectors (HSTS8) : Taipei, Taiwan, December 5-8, 2011

Published in:

Nucl.Instrum.Meth.A 699 (2013) 36-40

Contribution to:

- HSTD-8

DOI:

10.1016/j.nima.2012.05.071

reference search9 citations

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Abstract: (Elsevier)

Planar geometry silicon pixel and strip sensors for the high luminosity upgrade of the LHC (HL-LHC) require a high bias voltage of 1000V in order to withstand a radiation damage caused by particle fluences of 1x10^1^6 1MeVn_e_q/cm^2 and 1x10^1^5 1MeVn_e_q/cm^2 for pixel and strip detectors, respectively. In order to minimize the inactive edge space that can withstand a bias voltage of 1000V, edge regions susceptible to microdischarge (MD) should be carefully optimized. We fabricated diodes with various edge distances (slim-edge diodes) and with 1-3 multiple guard rings (multi-guard diodes). AC coupling insulators of strip sensors are vulnerable to sudden heavy charge deposition, such as an accidental beam splash, which may destroy the readout AC capacitors. Thus various types of punch-through-protection (PTP) structures were implemented in order to find the most effective structure to protect against heavy charge deposition. These samples were irradiated with 70MeV protons at fluences of 5x10^1^2 1MeVn_e_q/cm^2-1x10^1^6 1MeVn_e_q/cm^2. Their performances were evaluated before and after irradiation in terms of an onset voltage of the MD, a turn-on voltage of the PTP, and PTP saturation resistance.

HL-LHC
n-in-p sensor
Slim-edge
Multi-guard ring
Punch-through-protection
p: irradiation
radiation: damage
semiconductor detector: microstrip
semiconductor detector: pixel
performance

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