Cyclotron Resonance of Localized Electrons on a Si Surface
Jan 20, 1975Citations per year
Abstract: (APS)
Cyclotron resonance of electrons in an inversion layer on a Si (100) surface is studied in the regime of low electron densities ({n}_{s}<{10}^{12} electrons/). A distinct and sample-dependent shift of the resonance to lower magnetic field is observed as is decreased and electron localization is expected to occur. We give a simple interpretation of the effect in terms of electronic states bound in a harmonic-oscillator potential.References(0)
Figures(0)
0 References