Cyclotron Resonance of Localized Electrons on a Si Surface

Jan 20, 1975
Published in:
  • Phys.Rev.Lett. 34 (1975) 3, 151
  • Published: Jan 20, 1975

Citations per year

198219881994200020040123456
Abstract: (APS)
Cyclotron resonance of electrons in an inversion layer on a Si (100) surface is studied in the regime of low electron densities ({n}_{s}<{10}^{12} electrons/cm2{\mathrm{cm}}^{2}). A distinct and sample-dependent shift of the resonance to lower magnetic field is observed as ns{n}_{s} is decreased and electron localization is expected to occur. We give a simple interpretation of the effect in terms of electronic states bound in a harmonic-oscillator potential.
0 References