Investigation of CMOS pixel sensor with 0.18 μm CMOS technology for high-precision tracking detector

Jan 2, 2017

Citations per year

2017201820192020202110
Abstract: (IOP)
The Circular Electron Positron Collider (CEPC) proposed by the Chinese high energy physics community is aiming to measure Higgs particles and their interactions precisely. The tracking detector including Silicon Inner Tracker (SIT) and Forward Tracking Disks (FTD) has driven stringent requirements on sensor technologies in term of spatial resolution, power consumption and readout speed. CMOS Pixel Sensor (CPS) is a promising candidate to approach these requirements. This paper presents the preliminary studies on the sensor optimization for tracking detector to achieve high collection efficiency while keeping necessary spatial resolution. Detailed studies have been performed on the charge collection using a 0.18 μm CMOS image sensor process. This process allows high resistivity epitaxial layer, leading to a significant improvement on the charge collection and therefore improving the radiation tolerance. Together with the simulation results, the first exploratory prototype has bee designed and fabricated. The prototype includes 9 different pixel arrays, which vary in terms of pixel pitch, diode size and geometry. The total area of the prototype amounts to 2 × 7.88 mm(2).
  • Particle tracking detectors
  • Pixelated detectors and associated VLSI electronics
  • Simulation methods and programs
  • semiconductor detector: pixel
  • charge: yield
  • semiconductor detector: technology
  • tracking detector
  • spatial resolution
  • electron positron: colliding beams
  • semiconductor detector: design