Development of a silicon bulk radiation damage model for Sentaurus TCAD

Folkestad, Å.; Akiba, K.; van Beuzekom, M.; Buchanan, E.; Collins, P.; Dall'Occo, E.; Di Canto, A.; Evans, T.; Franco Lima, V.; García Pardiñas, J.

doi:10.1016/j.nima.2017.08.042

Development of a silicon bulk radiation damage model for Sentaurus TCAD

Å. Folkestad
(
- CERN
)
,
K. Akiba
(
- UFRJ, Rio de Janeiro
)
,
M. van Beuzekom
(
- NIKHEF, Amsterdam
)
,
E. Buchanan
(
- Bristol U.
)
,
P. Collins
(
- CERN
)

Dec 1, 2017

9 pages

Published in:

Nucl.Instrum.Meth.A 874 (2017) 94-102

Published: Dec 1, 2017 by Elsevier

DOI:

10.1016/j.nima.2017.08.042

View in:

CERN Document Server

reference search21 citations

Citations per year

Abstract: (Elsevier)

This article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8×10151MeVneq∕cm2 .

Silicon sensor
Silicon pixel detector
Radiation damage
TCAD
Device simulation
radiation: damage
semiconductor detector
charge: yield
efficiency
numerical calculations

References(24)

Figures(0)

[1]

LHCb VELO Upgrade Technical Design Report

LHCb

Collaboration

•

I. Bediaga

for the collaboration.

[2]

Numerical simulation of radiation damage effects in p-type and n-type FZ silicon detectors

M. Petasecca
(
- Perugia U. and
- INFN, Perugia
)
,
F. Moscatelli
(
- Perugia U. and
- INFN, Perugia and
- IMM, Bologna
)
,
D. Passeri
(
- Perugia U. and
- INFN, Perugia
)
,
G.U. Pignatel
(
- Perugia U. and
- INFN, Perugia
)

- IEEE Trans.Nucl.Sci. 53 (2006) 5, 2971-2976
•
DOI:
- 10.1109/TNS.2006.881910

[3]

Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

F. Moscatelli
(
- IMM, Bologna and
- INFN, Perugia
)
,
D. Passeri
(
- INFN, Perugia and
- Perugia U.
)
,
A. Morozzi
(
- INFN, Perugia and
- Perugia U.
)
,
Roberto Mendicino
(
- TIFPA-INFN, Trento and
- U. Trento (main)
)
,
G. -F. Dalla Betta
(
- TIFPA-INFN, Trento and
- U. Trento (main)
)

et al.

- IEEE Trans.Nucl.Sci. 63 (2016) 2716-2723
•
e-Print:
- 1611.10138
•
DOI:
- 10.1109/TNS.2016.2599560

[4]

Simulations of radiation-damaged 3D detectors for the Super-LHC

et al.

- Nucl.Instrum.Meth.A 592 (2008) 16-25
•
DOI:
- 10.1016/j.nima.2008.03.100

[5]

Investigations of new Sensor Designs and Development of an effective Radiation Damage Model for the Simulation of highly irradiated Silicon Particle Detectors, Ph.D. thesis, Karlsruhe Institute of Technology

R. Eber

[6]

A method to simulate the observed surface properties of proton irradiated silicon strip sensors

T. Peltola
,
A. Bhardwaj
,
R. Dalal
,
R. Eber
,
T. Eichhorn

et al.

- JINST 10 (2015) C04025-C04025.http://dx.doi.org/10.1088/1748-0221/10/04/C04025

[7]

Impact ionization and degradation in silicon dioxide films on silicon

C.R. Helms
,
B.E. Deal
,
D.J. DiMaria
,
D. Arnold
,
E. Cartier

[8]

Statistics of the recombinations of holes and electrons

W. Shockley
,
W.T. Read

- Phys.Rev. 87 (1952) 835

[9]

Electron-hole recombination in Germanium

R.N. Hall

- Phys.Rev. 87 (1952) 387

[10]

Measurement of the ionization rates in diffused silicon p-n junctions

R.V. Overstraeten
,
H.D. Man

- Solid State Electron. 13 (1970) 583
•
DOI:
- 10.1016/0038-1101(70)90139-5
•
- http://www.sciencedirect.com/science/article/pii/0038110170901395

[11]

Measurements of bandgap narrowing in Si Bipolar transistors

J. Slotboom
,
H. de Graaff

- Solid State Electron. 19 (1976) 857

[12]

A new recombination model for device simulation including tunneling

G.A.M. Hurkx
,
D.B.M. Klaassen
,
M.P.G. Knuvers

- IEEE Trans.Electron.Dev. 39 (1992) 331

[13]

Sentaurus Device User Guide, J-.09. Synopsys

[14]

Double peak electric field distortion in heavily irradiated silicon strip detectors

V. Eremin
(
- Ioffe Phys. Tech. Inst.
)
,
E. Verbitskaya
(
- Ioffe Phys. Tech. Inst.
)
,
Z. Li
(
- Brookhaven
)
,
S. Roe
(
- CERN
)
,
G. Ruggiero
(
- CERN
)

- Nucl.Instrum.Meth.A 535 (2004) 622-631
•
DOI:
- 10.1016/j.nima.2004.06.143

[15]

The origin of double peak electric field distribution in heavily irradiated silicon detectors

V. Eremin
(
- Ioffe Phys. Tech. Inst.
)
,
E. Verbitskaya
(
- Ioffe Phys. Tech. Inst.
)
,
Z. Li
(
- Brookhaven
)

- Nucl.Instrum.Meth.A 476 (2002) 556-564
•
DOI:
- 10.1016/S0168-9002(01)01642-4

[16]

Trapping induced N(eff) and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors

- Nucl.Instrum.Meth.A 360 (1995) 458-462
•
DOI:
- 10.1016/0168-9002(95)00112-3

[17]

Semiconductor radiation detectors

G. Lutz

[18]

Timepix3: a 65K channel hybrid pixel readout chip with simultaneous ToA/ToT and sparse readout

et al.

- JINST 9 (2014) 05, C05013
•
DOI:
- 10.1088/1748-0221/9/05/C05013

[19]

Irradiations in Karlsruhe, (December). URL

A. Dierlamm

[20]

Transnational access to TRIGA Mark III reactor at Jof Stefan Institute, Ljubljana, (December). URL

V. Cindro

[21]

Caracterizao do Timepix3 e de sensores resistentes radiao para upgrade do VELO, Ph.D. thesis, Universidade Federal do Rio de Janeiro,. URL

M.V.B. Pinto

[22]

S.M. Sze

[23]

Temperature dependence of the current generated in Si bulk

A. Chilingarov

- JINST 8 (2013) P10003-P10003.http://dx.doi.org/10.1088/1748-0221/8/10/P10003

[24]

Measurements of the reverse current of highly irradiated silicon sensors

et al.

- Nucl.Instrum.Meth.A 796 (2015) 126-130
•
DOI:
- 10.1016/j.nima.2015.04.027