Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose

Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. The present paper presents a detailed analysis of the functionality of EG MOSFETs operating under high TID, taking into accountspecific layout characteristics.

MOS devices
Threshold voltage
Integrated circuits
Logic gates
Hafnium
CMOS integrated circuits
MOSFET
radiation hardening (electronics)
frond-end electronics
High Luminosity-Large Hadron Collider

References(9)

Figures(0)

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