Hole spin manipulation in inhomogeneous and nonseparable electric fields

Martinez, Biel; Abadillo-Uriel, José Carlos; Rodríguez-Mena, Esteban A.; Niquet, Yann-Michel

doi:10.1103/PhysRevB.106.235426

Hole spin manipulation in inhomogeneous and nonseparable electric fields

Sep 21, 2022

12 pages

Published in:

Phys.Rev.B 106 (2022) 23, 235426

Published: Dec 15, 2022

e-Print:

2209.10231 [cond-mat.mes-hall]

DOI:

10.1103/PhysRevB.106.235426 (publication)

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Abstract: (APS)

The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the ac drive field is homogeneous. However, the electric field induced by the gates in quantum dot devices is not fully separable and displays significant inhomogeneities. Here we address the electrical manipulation of hole spins in semiconductor heterostructures subject to inhomogeneous vertical electric fields and/or in-plane ac electric fields. We consider Ge quantum dots electrically confined in a Ge/GeSi quantum well as an illustration. We show that the lack of separability between the vertical and in-plane motions gives rise to an additional spin-orbit coupling mechanism (beyond the usual linear and cubic in momentum Rashba terms) that modulates the principal axes of the hole gyromagnetic

g

matrix. This nonseparability mechanism can be of the same order of magnitude as Rashba-type interactions, and enables spin manipulation when the magnetic field is applied in the plane of the heterostructure even if the dot is symmetric (disk shaped). More generally, we show that Rabi oscillations in strongly patterned electric fields harness a variety of

g

-factor modulations. We discuss the implications for the design, modeling, and understanding of hole spin qubit devices.

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