Dual Operation of Gate-All-Around Silicon Nanowires at Cryogenic Temperatures: FET and Quantum Dot - INSPIRE

DataBETA

Dual Operation of Gate-All-Around Silicon Nanowires at Cryogenic Temperatures: FET and Quantum Dot

Dec 1, 2023

4 pages

e-Print:

2312.00903 [cond-mat.mes-hall]

View in:

ADS Abstract Service

reference search4 citations

Citations per year

Abstract: (arXiv)

As CMOS structures are envisioned to host silicon spin qubits, and for co-integrating quantum systems with their classical control blocks, the cryogenic behaviour of such structures need to be investigated. In this paper we characterize the electrical properties of Gate-All-Around (GAA) n-MOSFETs Si nanowires (NWs) from room temperature down to 1.7 K. We demonstrate that those devices can operate both as transistor and host quantum dots at cryogenic temperature. In the classical regime of the transistor we show improved performances of the devices and in the quantum regime we show systematic quantum dots formation in GAA devices.

Note:

4 pages, 4 figures

References(36)

Figures(4)

[1]

Silicon quantum electronics

et al.

- Rev.Mod.Phys. 85 (2013) 3, 961
•
DOI:
- 10.1103/RevModPhys.85.961

[2]

Storing quantum information for 30 seconds in a nanoelectronic device

Juha T. Muhonen
(
- New South Wales U.
)
,
Juan P. Dehollain
(
- New South Wales U.
)
,
Arne Laucht
(
- New South Wales U.
)
,
Fay E. Hudson
(
- New South Wales U.
)
,
Rachpon Kalra
(
- New South Wales U.
)

et al.

- Nature Nanotech. 9 (2014) 986-991
•
DOI:
- 10.1038/nnano.2014.211

[3]

J. Yoneda
,
K. Takeda
,
T. Otsuka
,
T. Nakajima
,
M.R. Delbecq

et al.

- Nature Nanotech. 13 (2018) 102

[4]

Silicon qubit fidelities approaching incoherent noise limits via pulse engineering

et al.

- Nature Electron. 2 (2019) 151-158
•
DOI:
- 10.1038/s41928-019-0234-1

[5]

Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold

et al.

- Nature Commun. 14 (2023) 1, 3617
•
e-Print:
- 2109.07837
•
DOI:
- 10.1038/s41467-023-39334-3

[6]

The electronic interface for quantum processors

J.P.G. van Dijk
(
- Delft Tech. U.
)
,
E. Charbon
(
- Delft Tech. U. and
- Unlisted, US and
- Ecole Polytechnique, Lausanne
)
,
F. Sebastiano
(
- Delft Tech. U.
)

- Microproc.Microsys. 66 (2019) 90-101
•
DOI:
- 10.1016/j.micpro.2019.02.004

[7]

Technical Digest - International Electron Devices Meeting, IEDM, 13.5.1

E. Charbon
,
F. Sebastiano
,
A. Vladimirescu
,
H. Homulle
,
S. Visser

et al.

•
DOI:
- 10.1109/IEDM.2016.7838410

[8]

Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent

L.M. K. Vandersypen
(
- Delft Tech. U. and
- Unlisted, US
)
,
H. Bluhm
(
- JARA, Aachen
)
,
J.S. Clarke
(
- Unlisted, US
)
,
A.S. Dzurak
(
- New South Wales U.
)
,
R. Ishihara
(
- Delft Tech. U.
)

et al.

- npj Quantum Inf. 3 (2017) 1, 34
•
DOI:
- 10.1038/s41534-017-0038-y

[9]

Silicon CMOS architecture for a spin-based quantum computer

M. Veldhorst
(
- Delft Tech. U. and
- New South Wales U.
)
,
H.G. J. Eenink
(
- Delft Tech. U. and
- New South Wales U.
)
,
C.H. Yang
(
- New South Wales U.
)
,
A.S. Dzurak
(
- New South Wales U.
)

- Nature Commun. 8 (2017) 1, 1766
•
DOI:
- 10.1038/s41467-017-01905-6

[10]

A. Beckers
,
F. Jazaeri
,
C. Enz

- IEEE Trans.Electron.Dev. 65 (2018) 3617
•
e-Print:
- 1806.02142
•
DOI:
- 10.1109/TED.2018.2854701

[11]

G. Pahwa
,
P. Kushwaha
,
A. Dasgupta
,
S. Salahuddin
,
C. Hu

- IEEE Trans.Electron.Dev. 68 (2021) 4223
•
DOI:
- 10.1109/TED.2021.3097971

[12]

inSymposium on VLSI Circuits pp. 1-2

N.I.D. Stuyck
,
R. Li
,
C. Godfrin
,
A. Elsayed
,
S. Kubicek

et al.

•
DOI:
- 10.23919/VLSICircuits52068.2021.9492427

[13]

A CMOS silicon spin qubit

R. Maurand
(
- U. Grenoble Alpes and
- CEA INAC, Grenoble
)
,
X. Jehl
(
- U. Grenoble Alpes and
- CEA INAC, Grenoble
)
,
D. Kotekar-Patil
(
- U. Grenoble Alpes and
- CEA INAC, Grenoble
)
,
A. Corna
(
- U. Grenoble Alpes and
- CEA INAC, Grenoble
)
,
H. Bohuslavskyi
(
- U. Grenoble Alpes and
- CEA INAC, Grenoble
)

et al.

- Nature Commun. 7 (2016) 1, 13575
•
DOI:
- 10.1038/ncomms13575

[14]

Author Correction: Qubits made by advanced semiconductor manufacturing

et al.

- Nature Electron. 5 (2022) 5, 319,
- Nature Electron. 5 (2022) 184-190
•
e-Print:
- 2101.12650
•
DOI:
- 10.1038/s41928-022-00772-4

[15]

A hole spin qubit in a fin field-effect transistor above 4 kelvin

et al.

- Nature Electron. 5 (2022) 178-183
•
e-Print:
- 2103.07369
•
DOI:
- 10.1038/s41928-022-00722-0

[16]

in Technical Digest - International Electron Devices Meeting, IEDM pp. 657-660

P. Bai
,
C. Auth
,
S. Balakrishnan
,
M. Bost
,
R. Brain

et al.

•
DOI:
- 10.1109/iedm.2004.1419253

[17]

in Technical Digest - International Electron Devices Meeting, IEDM pp. 247-250

K. Mistry
,
C. Allen
,
C. Auth
,
B. Beattie
,
D. Bergstrom

et al.

•
DOI:
- 10.1109/IEDM.2007.4418914

[18]

in Digest of Technical Papers - Symposium on VLSI Technology pp. 128-129

C. Auth
,
A. Cappellani
,
J.S. Chun
,
A. Dalis
,
A. Davis

et al.

•
DOI:
- 10.1109/VLSIT.2008.4588589

[19]

in Digest of Technical Papers - Symposium on VLSI Technology pp. 131-132

C. Auth
,
C. Allen
,
A. Blattner
,
D. Bergstrom
,
M. Brazier

et al.

•
DOI:
- 10.1109/VLSIT.2012.6242496

[20]

and A. V.-y. Thean, in Digest of Technical Papers - Symposium on VLSI Technology, Vol.-Septe

H. Mertens
,
R. Ritzenthaler
,
A. Hikavyy
,
M.S. Kim
,
Z. Tao

et al.

•
DOI:
- 10.1109/VLSIT.2016.7573416

[21]

Technical Digest - International Electron Devices Meeting, IEDM, 19.7.1

H. Mertens
,
R. Ritzenthaler
,
A. Chasin
,
T. Schram
,
E. Kunnen

et al.

•
DOI:
- 10.1109/IEDM.2016.7838456

[22]

F. J. Garcı́a Sánchez, J. J. Liou, A. Cerdeira, M. Estrada, and Y. Yue

A. Ortiz-Conde

- Microelectron.Reliab. 42 (2002) 583
•
DOI:
- 10.1016/S0026-2714(02)00027-6

[23]

Journal of the Electron Devices Society 8, 780

A. Beckers
,
F. Jazaeri
,
A. Grill
,
S. Narasimhamoorthy
,
B. Parvais

et al.

•
DOI:
- 10.1109/JEDS.2020.2989629

[24]

in European SolidState Device Research Conference (Editions Frontieres,) pp. 58-61

R.M. Incandela
,
L. Song
,
H.A. Homulle
,
F. Sebastiano
,
E. Charbon

et al.

•
DOI:
- 10.1109/ESSDERC.2017.8066591

[25]

pp. 9-10

H. Bohuslavskyj
,
S. Barraud
,
M. Casse
,
L. Hutin
,
F. Arnaud

et al.

1-25 of 36
1
2
25 / page