Theory of high performance piezotronic quantum harmonic oscillator under nonuniform strain
Sep 29, 2023Published in:
- Nano Energy 118 (2023) 108954
- Published: Sep 29, 2023
DOI:
- 10.1016/j.nanoen.2023.108954 (publication)
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Abstract: (Elsevier Ltd)
Piezotronics and piezo-phototronics are two emerging fields that involve high performance piezoelectric semiconductor devices. The nonuniform strain can create nonlinear piezopotential even in nonpiezoelectric materials such as silicon. Here, we propose theory of quantum piezotronics under nonuniform strain using a typical example of the interaction between independently trapped charges under nonlinear piezopotential. The trapped-ion motional frequency along the x direction can increase from 4 MHz to 25 MHz, and the electric-field noise can decrease by 15 times under nonuniform strain. This piezotronic harmonic oscillator based on trapping wells not only provides a good understanding of quantum piezotronics but also a guide for developing peizotronic devices for quantum computing. High-performance piezotronic quantum harmonic oscillator is based on two independently trapped ions under nonuniform strain. The nonuniform strain can tune coupling between the motions of two independently trapped ions. The trapped-ion motional frequency along the x direction can increase from 4 MHz to 25 MHz, and the electric-field noise can decrease by 15 times under nonuniform strain.ga1 •The nonuniform strain can create quadratic piezo-potential to control the axis motional frequency of trapped ions qubit.•The trapped-ion motional frequency along the x direction can reach up to 25 MHz under nonuniform strain.•The surface electric-field noise is decreased by 15 times under nonuniform strain.- Piezotronics
- Nonuniform strain
- Trapped ion
- Harmonic oscillators
- Qubit
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