Low noise silicon microstrip detector

Kucewicz, W.; Pilch, M.

doi:10.1016/S0920-5632(97)00582-3

Low noise silicon microstrip detector

W. Kucewicz
(
- AGH-UST, Cracow
)
,
M. Pilch
(
- Inst. Electron Tech., Warsaw
)

1998

5 pages

Part of Advanced technology and particle physics. Proceedings, 5th International Conference, ICATPP-5, Como, Italy, October 7-11, 1996, 330-334

Published in:

Nucl.Phys.B Proc.Suppl. 61 (1998) 330-334

Contribution to:

5th International Conference on Advanced Technology and Particle Physics (COMO 96), 330-334

DOI:

10.1016/S0920-5632(97)00582-3

reference search1 citation

Citations per year

Abstract: (Elsevier)

Results obtained during characterization of position silicon detector with integrated biasing polysilicon resistors and capacitors are presented. These detectors show very small active area leakage current 2 (about 20± 13 nA/cm ) and have a high S/N ratio (150) for minimum ionizing particles.

talk: Como 1996/10/07

References(3)

Figures(0)

[1]

First results from a Silicon-strip Detectors with VLSI Readout

G. Anzivino

- Nucl.Instrum.Meth.A 243 (1986) 57

[2]

1-micron spatial resolution with silicon strip detectors

et al.

- Nucl.Instrum.Meth.A 348 (1994) 485-490,
- Nucl. Instrum. Methods A348 (1994) 485-490, and CERN Geneva - CERN-PPE-94-026 (94/03,rec.May) 11 p
•
DOI:
- 10.1016/0168-9002(94)90785-4

[3]

: Final Report for State Committee for Scientific Research (KEN) project no 8 S501 033 05

W. Kucewicz