Results on defects induced by Co-60 gamma irradiation in standard and oxygen enriched silicon - INSPIRE

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Results on defects induced by Co-60 gamma irradiation in standard and oxygen enriched silicon

I. Pintilie
(
- Hamburg U. and
- Bucharest, Inst. Math.
)
,
E. Fretwurst
(
- Hamburg U. and
- Bucharest, Inst. Math.
)
,
G. Lindstrom
(
- Hamburg U. and
- Bucharest, Inst. Math.
)
,
J. Stahl
(
- Hamburg U. and
- Bucharest, Inst. Math.
)

Nov, 2002

7 pages

Part of Radiation effects on semiconductor materials, detectors and devices. Proceedings, 4th International Conference, RESMDD'02, Florence, Italy, July 10-12, 2002

Published in:

Nucl.Instrum.Meth.A 514 (2003) 18-24

Contribution to:

4th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices (RESMDD02)

DOI:

10.1016/j.nima.2003.08.079

Report number:

DESY-02-199D

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Abstract: (Elsevier)

Radiation-induced defects in silicon diodes were investigated after exposure to high doses of 60 Co gamma irradiation, using Deep Level Transient Fourier Spectroscopy and Thermally Stimulated Current methods. The main focus was on differences between standard and oxygen-enriched material and the impact of the observed defect generation on the diode properties. Two close to mid gap trapping levels and a bi-stable donor level have been found to be responsible for the main macroscopic changes both in standard and oxygen-enriched float zone diodes.

Note:

Part of arXiv physics/0211118

61.72.Ji
61.80.Ed
29.40.Wk
Point defects
60 Co gamma irradiation
Silicon detectors
60Co gamma irradiation
talk: Florence 2002/07/10
semiconductor detector
silicon: oxygen

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Figures(0)

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