Monte-Carlo Simulations of Electron Channelling a Bent (110) Channel in Silicon
Apr, 2011
Citations per year
Abstract: (Springer)
Results obtained with a new Monte Carlo code ChaS for channeling of 855 MeV electrons along the crystallographic plane (110) in a bent silicon crystal are presented. The dependence of the dechanneling length and the asymptotic acceptance of the channel on the crystal bending is studied. PDF = http://www.springerlink.com/Note:
- 8 pages, 8 figures
- 41.75.Fr
- 02.70.Uu
- 61.85.+p
- Atomic and Molecular Collisions
- silicon: bent crystal
- numerical calculations: Monte Carlo
- electron: channeling
- beam transport
- acceptance
- electron: energy
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