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Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe

2006
9 pages
Published in:
  • Appl.Phys.Lett. 88 (2006) 192906
e-Print:
DOI:
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20042005200601
Abstract: (arXiv)
We present a method for noncontact, noninvasive measurements of dielectric constant, k, of 100-nm- to 1.5-\mu m-thick blanket low-k interconnect films on up to 300 mm in diameter wafers. The method has about 10 micron sampling spot size, and provides <0.3% precision and <2% accuracy for k-value. It is based on a microfabricated near-field scanned microwave probe formed by a 4 GHz parallel strip transmission line resonator tapered down to a few-micron tip size.
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