Radiation Tolerant Circuits Designed in Two Commercial 0.25 CMOS Processes
Mar, 2001
4 pages
Report number:
- FERMILAB-CONF-01-026-E
Experiments:
View in:
Citations per year
0 Citations
Abstract:
Characterization of simple devices as well as complex circuits, in two commercial 0.25μ processes, demonstrates a high level (up to 58Mrad) radiation tolerance of these technologies. They are also very likely to be immune to single event gate damage according to our results from 200Me V-protons irradiation.- talk
- semiconductor detector: pixel
- electronics: readout
- integrated circuit
- radiation: damage
- p: radiation
- magnetic spectrometer: BTeV
- Batavia TEVATRON Coll
References(0)
Figures(0)
0 References