Single Event Effects in the Pixel Readout Chip for BTeV
Nov, 2001
15 pages
Published in:
- Nucl.Instrum.Meth.A 501 (2001) 183-188
Contribution to:
e-Print:
- hep-ex/0111094 [hep-ex]
Report number:
- FERMILAB-CONF-01-369-E
Experiments:
Citations per year
Abstract: (arXiv)
In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 um CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.Note:
- 15 pages, 6 Postscript figures
- talk: Brunnen 2001/09/23
- semiconductor detector: pixel
- semiconductor detector: readout
- integrated circuit
- radiation: damage
- p: radiation
- magnetic spectrometer: BTeV
- Batavia TEVATRON Coll
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