Radiation Tolerance of Prototype BTeV Pixel Detector Readout Chips
Jul, 2002
7 pages
Published in:
- IEEE Trans.Nucl.Sci. 49 (2002) 2895-2901
Contribution to:
Report number:
- FERMILAB-CONF-02-147-E
Experiments:
View in:
Citations per year
Abstract: (IEEE)
High-energy and nuclear physics experiments need tracking devices with increasing spatial precision and readout speed in the face of ever-higher track densities and increased radiation environments. The new generation of hybrid pixel detectors (arrays of silicon diodes bump-bonded to arrays of front-end electronic cells) is the state-of-the-art technology able to meet these challenges. We report on irradiation studies performed on BTeV pixel readout chip prototypes exposed to a 200-MeV proton beam at the Indiana University Cyclotron Facility. A prototype pixel readout chip (preFPIX2) has been developed at Fermilab for collider experiments and implemented in standard 0.25-μm CMOS technology following radiation-tolerant design rules. The chip contains a variety of functional blocks (analog front ends, registers, state machines, and digital-to-analog converters). The tests confirm the radiation tolerance to proton total dose up to 87 Mrad of all of these circuits. In addition, nondestructive radiation-induced single-event upsets have been observed in on-chip static registers, and the single-bit upset cross-section has been extensively measured.- talk: Phoenix 2002/07/15
- semiconductor detector: pixel
- electronics: readout
- integrated circuit
- radiation: damage
- p: radiation
- magnetic spectrometer: BTeV
- Batavia TEVATRON Coll
References(4)
Figures(0)