Radiation hardness study on a CMOS pixel sensor for charged particle tracking

Li, Long; Zhang, Liang; Dong, Jianing; Liu, Jian; Wang, Meng

Radiation hardness study on a CMOS pixel sensor for charged particle tracking

Feb 23, 2022

11 pages

e-Print:

2202.11471 [physics.ins-det]

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Abstract: (arXiv)

A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicon tracker for the Circular Electron-Positron Collider (CEPC) project. The sensor, consisted of nine sectors varying in pixel sizes, diode sizes and geometries, is fabricated with a 180 nm CMOS Image Sensor (CIS) process to study the particle detection performance of enlarged pixels. In this work, the radiation-induced effects on the charge collection of the sensor under the fluence of 1

\times

10^13 1 MeV neq/cm^2 are studied by the measurements with the radioactive source of Fe-55 and the Technology Computer Aided Design (TCAD) simulations, since the radiation hardness of 6.8

\times

10^12 1 MeV neq/cm^2 per year for Non-Ionizing Energy Loss (NIEL) effects is required. In measurements, the sensor gain has been calibrated using the k-

\alpha

peak of Fe-55 before and after irradiation. The pixel-wise equivalent noise charge (ENC), charge collection efficiency (CCE) and signal-to-noise ratio (SNR) were evaluated. The radiation-induced effects on cluster properties are studied through a self-developed reconstruction algorithm. In TCAD simulations, charge collections in 5

\times

5 pixel matrixes for two typical impinging cases of incident particles were simulated with and without irradiation. Both measurements and simulations indicate that enlarged pixels with area of 21

\mu

m

\times

84

\mu

m, though suffering greater loss on sensor performance than small pixels do, still have satisfactory noise and charge collection performance after irradiation for particle tracking in the upcoming collider detectors.

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