Liangyu Ding

Quantum state discrimination in a

\mathcal{PT}

-symmetric system of a single trapped ion

#1

Chenhao Zhu
(
- Peking U.
)
,
Tingting Shi
(
- Peking U.
)
,
Liangyu Ding
(
- BAQIS, Beijing
)
,
Zhiyue Zheng
(
- BAQIS, Beijing
)
,
Xiang Zhang
(
- Peking U. and
- BAQIS, Beijing
)

et al.

(Feb 28, 2025)

e-Print:
- 2502.20717 [quant-ph]

pdf

reference search0 citations

Experimental Test of Contextuality Based on State Discrimination with a Single Qubit

#2

et al.

(Jun 22, 2022)

Published in:
- Chin.Phys.Lett. 39 (2022) 8, 080301,
- Chin.Phys.Lett. 39 (2022) 080301
•
e-Print:
- 2206.10828 [quant-ph]

pdfDOI

reference search5 citations

Experimentally ruling out joint reality based on operational completeness

#3

et al.

(Mar 10, 2022)

Published in:
- Quantum Sci.Technol. 9 (2024) 2, 025001
•
e-Print:
- 2203.05244 [quant-ph]

pdfDOI

reference search2 citations

Information retrieval and eigenstate coalescence in a non-Hermitian quantum system with anti-PT symmetry

#4

et al.

(Jan 20, 2022)

Published in:
- Phys.Rev.A 105 (2022) 1, L010204

DOI

reference search20 citations

Experimental Determination of

P T

-Symmetric Exceptional Points in a Single Trapped Ion

#5

et al.

(Feb 23, 2021)

Published in:
- Phys.Rev.Lett. 126 (2021) 8, 083604

DOI

reference search109 citations

High-performance frequency stabilization of ultraviolet diode lasers by using dichroic atomic vapor spectroscopy and transfer cavity

#6

et al.

(Apr 8, 2020)

Published in:
- Chin.Phys.B 29 (2020) 7, 074210
•
e-Print:
- 2004.03897 [physics.optics]

pdfDOI

reference search0 citations

Radiation tolerance study of a commercial 65 nm CMOS technology for high energy physics applications

#7

Lili Ding
(
- Padua U. and
- INFN, Padua and
- Northwest Inst. Nucl. Tech., Xian
)
,
Simone Gerardin
(
- Padua U. and
- INFN, Padua
)
,
Marta Bagatin
(
- Padua U.
)
,
Dario Bisello
(
- Padua U. and
- INFN, Padua
)
,
Serena Mattiazzo
(
- Padua U.
)

et al.

(Sep 21, 2016)

Published in:
- Nucl.Instrum.Meth.A 831 (2016) 265-268
•
Contribution to:
- HSTD-10
  , 265-268

DOI

reference search2 citations

Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors

#8

et al.

(Aug 30, 2016)

Published in:
- Chin.Phys.B 25 (2016) 9, 096110

DOI

reference search1 citation

Radiation Vulnerability in 65 nm CMOS I/O Transistors after Exposure to Grad Dose

#9

Lili Ding
(
- U. Padua (main)
)
,
Simone Gerardin
(
- U. Padua (main)
)
,
Marta Bagatin
(
- U. Padua (main)
)
,
Serena Mattiazzo
(
- U. Padua (main)
)
,
Dario Bisello
(
- INFN, Padua
)

et al.

(Sep, 2015)

Published in:
- IEEE Nucl.Sci.Symp.Conf.Rec.
•
Contribution to:
- RADECS 2015

DOI

reference search1 citation

Drain Current Collapse in 65 nm pMOS Transistors After Exposure to Grad Dose

#10

et al.

(2015)

Published in:
- IEEE Trans.Nucl.Sci. 62 (2015) 6, 2899-2905
•
Contribution to:
- NSREC 2015
  , 2899-2905

DOI

reference search4 citations

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